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Teh Effect of Boron Concentration upon Defect Formation after Laser Thermal Processing using Molecular Dynamics

Journal Defect and Diffusion Forum (Volumes 210 - 212)
Volume Defects and Diffusion in Semiconductors
Edited by D.J. Fisher
Pages 71-80
DOI 10.4028/www.scientific.net/DDF.210-212.71
Citation L. Wang et al., 2002, Defect and Diffusion Forum, 210-212, 71
Authors L. Wang, C.S. Murthy, P. Clancy
Keywords Boron Concentration, Defect Formation, Laser Thermal Processing, Molecular Dynamics (MD)
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