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Defect States in InAs Quantum Dots Characterized by Photo-Induced Current Transient Spectroscopy

Journal Defect and Diffusion Forum (Volumes 210 - 212)
Volume Defects and Diffusion in Semiconductors
Edited by D.J. Fisher
Pages 81-88
DOI 10.4028/www.scientific.net/DDF.210-212.81
Citation Hoon Young Cho, 2002, Defect and Diffusion Forum, 210-212, 81
Authors Hoon Young Cho
Keywords Deep Level Defect, GaAs, InAs, Molecular Beam Epitaxy, PICTS, Quantum Dot
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