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Diffusion of Ga Implanted into α-Ti Studied by Means of the Rutherford Backscattering Technique

Journal Defect and Diffusion Forum (Volumes 213 - 215)
Volume Defect and Diffusion in Metals
Edited by D.J. Fisher
Pages 1-18
DOI 10.4028/www.scientific.net/DDF.213-215.1
Authors M. Behar, J.H.R. dos Santos, F. Bernardi, Fanny Dyment
Keywords Ga, Ion Implantation, RBS, α-Ti
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