Point Defect Formation in Si and Si:Ge; Computational Analysis of Pressure Effects |
| Journal |
Defect and Diffusion Forum (Volumes 216 - 217) |
| Volume |
Diffusion, Segregation and Stresses in Materials |
| Edited by |
B.S. Bokstein and B.B. Straumal |
| Pages |
29-34 |
| DOI |
10.4028/www.scientific.net/DDF.216-217.29 |
| Citation |
Mariya G. Ganchenkova et al., 2003, Defect and Diffusion Forum, 216-217, 29 |
| Authors |
Mariya G. Ganchenkova, Andrei V. Nazarov, Andrej Yu. Kuznetsov |
| Keywords |
Point Defect, Pressure, Silicon, Simulation |
| Full Paper |
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