Paper Title:
Point Defect Formation in Si and Si:Ge; Computational Analysis of Pressure Effects
  Abstract

  Info
Periodical
Defect and Diffusion Forum (Volumes 216-217)
Edited by
B.S. Bokstein and B.B. Straumal
Pages
29-34
DOI
10.4028/www.scientific.net/DDF.216-217.29
Citation
M. G. Ganchenkova, A. V. Nazarov, A. Y. Kuznetsov, "Point Defect Formation in Si and Si:Ge; Computational Analysis of Pressure Effects", Defect and Diffusion Forum, Vols. 216-217, pp. 29-34, 2003
Online since
February 2003
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Price
$32.00
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