Deep Level Characterization and its Passivation in 3C-SiC Monitored by Capacitance Transient Methods |
| Journal |
Defect and Diffusion Forum (Volumes 218 - 220) |
| Volume |
Defects and Diffusion in Ceramics |
| Edited by |
D.J. Fisher |
| Pages |
1-16 |
| DOI |
10.4028/www.scientific.net/DDF.218-220.1 |
| Citation |
Masashi Kato et al., 2003, Defect and Diffusion Forum, 218-220, 1 |
| Authors |
Masashi Kato, Masaya Ichimura, Eisuke Arai, Yutaka Tokuda |
| Keywords |
3C-SiC, Configuration Coordinate, CTS, DLTS, Hydrogen Plasma, ND1 Center, O-CTS, Passivation |
| Full Paper |
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