Paper Title:
Deep Level Characterization and its Passivation in 3C-SiC Monitored by Capacitance Transient Methods
  Abstract

  Info
Periodical
Defect and Diffusion Forum (Volumes 218-220)
Edited by
D.J. Fisher
Pages
1-16
DOI
10.4028/www.scientific.net/DDF.218-220.1
Citation
M. Kato, M. Ichimura, E. Arai, Y. Tokuda, "Deep Level Characterization and its Passivation in 3C-SiC Monitored by Capacitance Transient Methods ", Defect and Diffusion Forum, Vols. 218-220, pp. 1-16, 2003
Online since
August 2003
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