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New Approach to Capacitance Studies of 'DX' Centers

Journal Defect and Diffusion Forum (Volumes 221 - 223)
Volume Defects and Diffusion in Semiconductors
Edited by D.J. Fisher
Pages 11-22
DOI 10.4028/www.scientific.net/DDF.221-223.11
Citation L. Dózsa, 2003, Defect and Diffusion Forum, 221-223, 11
Authors L. Dózsa
Keywords Capacitance Transients, DLTS Simulation, DX Centers
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