Recent Advances in the Measurement of Interstitial Oxygen in Silicon by Infra-Red Spectroscopy |
|
| Journal | Defect and Diffusion Forum (Volumes 221 - 223) |
|---|---|
| Volume | Defects and Diffusion in Semiconductors |
| Edited by | D.J. Fisher |
| Pages | 123-132 |
| DOI | 10.4028/www.scientific.net/DDF.221-223.123 |
| Citation | B. Pivac et al., 2003, Defect and Diffusion Forum, 221-223, 123 |
| Authors | B. Pivac, A. Sassella, A. Borghesi |
| Keywords | Infra-Red Spectroscopy, Interstitial Oxygen, Silicon Wafer, Spurious Data |
| Full Paper | 
Get the full paper by clicking here
|
First page example
