Paper Title:
Investigation and Identification of Transition Metals in p-Type Boron-Doped Silicon by Non-Invasive Techniques
  Abstract

This paper describes the “pairing - dissociation” behaviour of metal-acceptor pairs and proposes a method to measure metal concentrations in p-type boron doped silicon based on a contactless measurement technique. The first part of this paper sums up the previous non destructive electrical characterization methods that have led to the evaluation of iron concentrations in p-type boron- doped silicon by the inspired contactless techniques. It is demonstrated that the lifetime measurement method proposed allows the detection of contaminants at concentrations as low as 109at.cm-3. In the second part, the specific cases of iron and chromium that are among the most harmful metal contaminants are discussed. We show that these contaminants, even if their concentrations are not known, are identifiable by contactless measurements that allow the analysis of their kinetics of pairing with boron atoms and of their respective interactions with extended defects, such as grain boundaries in multicrystalline silicon.

  Info
Periodical
Defect and Diffusion Forum (Volumes 230-232)
Edited by
David J. Fisher
Pages
125-134
DOI
10.4028/www.scientific.net/DDF.230-232.125
Citation
O. Palais, P. Hidalgo, "Investigation and Identification of Transition Metals in p-Type Boron-Doped Silicon by Non-Invasive Techniques ", Defect and Diffusion Forum, Vols. 230-232, pp. 125-134, 2004
Online since
November 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Vladimir V. Voronkov, Robert J. Falster
83
Authors: Vladimir V. Voronkov, A.V. Batunina, G.I. Voronkova, Robert J. Falster
117
Authors: Jacques Chevallier, François Jomard, Cecile Saguy, R. Kalish, A. Deneuville
Abstract:Electronic grade diamond is usually grown by Microwave Plasma assisted CVD from a hydrogen rich CH4/H2 mixture, hence hydrogen is likely to...
63
Authors: Vladimir V. Voronkov, Robert J. Falster, Semih Senkader
Abstract:Out-diffusion nitrogen profiles measured by SIMS after annealing at 850 and 800oC, have a peculiar minimum at a depth of about 5 m. The...
149
Authors: Minoru Nakamura, Susumu Murakami
Chapter 5: Group IV Materials: Defect, Impurity, and Nanostructure
Abstract:Formation and annealing behavior of the 1.014-eV copper center and its dissociation product (center) in silicon are characterized by...
209