Mechanism of Formation and Physical Classification of the Grown-In Microdefects in Semiconductor Silicon |
| Journal |
Defect and Diffusion Forum (Volumes 230 - 232) |
| Volume |
Defects and Diffusion in Semiconductors - An Annual Retrospective VII |
| Edited by |
David J. Fisher |
| Pages |
177-198 |
| DOI |
10.4028/www.scientific.net/DDF.230-232.177 |
| Citation |
V.I. Talanin et al., 2004, Defect and Diffusion Forum, 230-232, 177 |
| Authors |
V.I. Talanin, I.E. Talanin |
| Keywords |
Carbon, Carbon-Interstitial Aggregates, Classification, Grown-In Microdefects, Intrinsic Point Defects (IPD), Mechanism of Formation, Oxygen, Oxygen-Vacancy Aggregates |
| Full Paper |
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