Radiation-Induced Defect Formation in Ternary Ge-As-S Vitreous Semiconductors |
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| Journal | Defect and Diffusion Forum (Volumes 230 - 232) |
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| Volume | Defects and Diffusion in Semiconductors - An Annual Retrospective VII |
| Edited by | David J. Fisher |
| Pages | 67-80 |
| DOI | 10.4028/www.scientific.net/DDF.230-232.67 |
| Citation | R.Ya. Golovchak et al., 2004, Defect and Diffusion Forum, 230-232, 67 |
| Authors | R.Ya. Golovchak, Oleg I. Shpotyuk |
| Keywords | Chalcogenide Vitreous Semiconductors, Chemical Bond Re-Switching, Coordination Topological Defects, Radiation-Induced Defects |
| Abstract | A mechanism of g-induced (Co60 g-quanta of 1.25 MeV mean energy) changes in optical properties of ternary As-Ge-S chalcogenide vitreous semiconductors is analysed. It is connected with chemical bond re-switching accompanied by coordination topological defect formation. The origin of these defects for As-Ge-S system is discussed using data of positron annihilation lifetime spectroscopy, IR Fourier reflection measurements and mathematical statistics. |
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