Radiation-Induced Defect Formation in Ternary Ge-As-S Vitreous Semiconductors
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| Journal |
Defect and Diffusion Forum (Volumes 230 - 232) |
| Volume |
Defects and Diffusion in Semiconductors - An Annual Retrospective VII |
| Edited by |
David J. Fisher |
| Pages |
67-80 |
| DOI |
10.4028/www.scientific.net/DDF.230-232.67 |
| Authors |
R.Ya. Golovchak,
Oleg I. Shpotyuk
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| Keywords |
Chalcogenide Vitreous Semiconductors, Chemical Bond Re-Switching, Coordination Topological Defects, Radiation-Induced Defects |
| Abstract |
A mechanism of g-induced (Co60 g-quanta of 1.25 MeV mean energy) changes in optical properties of ternary As-Ge-S chalcogenide vitreous semiconductors is analysed. It is connected with chemical bond re-switching accompanied by coordination topological defect formation. The origin of these defects for As-Ge-S system is discussed using data of positron annihilation lifetime spectroscopy, IR Fourier reflection measurements and mathematical statistics. |
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