Paper Title:
Anisotropy of Strain Relaxation in III-V Semiconductor Heterostructures
  Abstract

Partially relaxed III–V heterostructures: GaAs/InGaAs and InP/InAlAs/InGaAs, with a small lattice mismatch, grown using molecular beam epitaxy under compressive or tensile misfit stress at the (001) interface, have been investigated by means of high-resolution X-ray diffractometry, atomic force microscopy and generalized ellipsometry. Additionally, transmission electron microscopy and electron-beam induced current in a scanning electron microscope have been employed to reveal misfit dislocations at the heterostructure interface. Chemical etching was used to determine polarity of the crystals and threading dislocation densities in the epitaxial layers. Our findings are interpreted in terms of the dependent on growth conditions, material’s composition and doping glide velocities of two types of misfit dislocations: α and β, differing in their core structure and lying along two orthogonal 〈110〉 crystallographic directions at the (001) interface.

  Info
Periodical
Defect and Diffusion Forum (Volumes 230-232)
Edited by
David J. Fisher
Pages
93-100
DOI
10.4028/www.scientific.net/DDF.230-232.93
Citation
O. Yastrubchak, T. Wosiński, J.Z. Domagała, E. Łusakowska, "Anisotropy of Strain Relaxation in III-V Semiconductor Heterostructures ", Defect and Diffusion Forum, Vols. 230-232, pp. 93-100, 2004
Online since
November 2004
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