Paper Title:
Migration of Ion Implanted Hydrogen in Amorphous and Polycrystalline Si3N4:H Films: Experiments and Numerical Simulations
  Abstract

The tracer diffusion of ion implanted deuterium is studied in amorphous and polycrystalline magnetron-sputtered Si3N4:H films with secondary ion mass spectrometry (SIMS). The experimentally obtained diffusion profiles are numerically simulated by computer calculations based on the concept of trap-limited diffusion where the tracer atoms form immobile complexes with: (a) intrinsic film defects like dangling bonds and (b) extrinsic defects caused by the implantation damage. For amorphous Si3N4:H films a moderately high dissociation rate of intrinsic complexes (dangling bonds) is present and time independent effective diffusivities are observed, which obey an Arrhenius law with an activation energy of DE = 3.4 eV and a pre-exponential factor of D0 = 4 x 10-4 m2/s. For polycrystalline Si3N4 films non-Gaussian depth profiles and strongly time dependent diffusivities are observed, which have their reason in the presence of intrinsic traps with negligible dissociation, presumably located at the grain boundaries.

  Info
Periodical
Defect and Diffusion Forum (Volumes 237-240)
Edited by
M. Danielewski, R. Filipek, R. Kozubski, W. Kucza, P. Zieba, Z. Zurek
Pages
566-571
DOI
10.4028/www.scientific.net/DDF.237-240.566
Citation
H. Schmidt, G. Borchardt, "Migration of Ion Implanted Hydrogen in Amorphous and Polycrystalline Si3N4:H Films: Experiments and Numerical Simulations", Defect and Diffusion Forum, Vols. 237-240, pp. 566-571, 2005
Online since
April 2005
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$32.00
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