The Size Distribution of Defect Clusters in n-Si (FZ, Cz), Irradiated by Fast Neutrons |
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| Journal | Defect and Diffusion Forum (Volumes 245 - 246) |
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| Volume | Defects and Diffusion in Semiconductors - an Annual Retrospective VIII |
| Edited by | David J. Fisher |
| Pages | 1-8 |
| DOI | 10.4028/www.scientific.net/DDF.245-246.1 |
| Citation | A.P. Dolgolenko et al., 2005, Defect and Diffusion Forum, 245-246, 1 |
| Online since | October, 2005 |
| Authors | A.P. Dolgolenko, G.P. Gaidar |
| Keywords | Defect Cluster, Fast-Pile Neutron, Irradiation, Silicon |
| Abstract | The dependence of concentration of defects on doping level for average cluster in n-Si was calculated. It was shown that in the framework of the Gossick's model the concentration of defects for the average cluster is in inverse proportion to the square of a cluster radius. One obtains the size distribution of defect clusters created by fast neutrons of WWR-M reactor, by the transformation of energy spectrum of the primary knock-on atom in n-Si (FZ, Cz). Threshold energy of defect clusters formation 4.7 keV by comparing n-Si crystals irradiated by deuterons and fast-pile neutrons was calculated. |
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