Paper Title:
Oxygen Enrichment of Silicon Wafer by Ion Implantation Method and Fabrication of Surface Barrier Detectors
  Abstract

Silicon surface barrier (SSB) detectors have been fabricated with oxygen enriched, high-resistivity, detector grade, n-type FZ silicon. Oxygen enrichment of the wafer was done by high-energy (140 MeV) oxygen ion implantation. Annealing of the irradiated silicon wafer was done to minimize the irradiation-induced defect concentration. Positron annihilation lifetime studies were used to select the annealing temperature. A comparative study was carried out among various SSB detectors made from as-grown, as-irradiated and annealed silicon wafers. Detector made from the annealed wafer worked satisfactorily and its performance was comparable with that of a detector made from as-grown crystal.

  Info
Periodical
Defect and Diffusion Forum (Volumes 245-246)
Edited by
David J. Fisher
Pages
23-28
DOI
10.4028/www.scientific.net/DDF.245-246.23
Citation
S.K. Chaudhuri, P.V. Rajesh, S.S. Ghugre, D. Das, "Oxygen Enrichment of Silicon Wafer by Ion Implantation Method and Fabrication of Surface Barrier Detectors", Defect and Diffusion Forum, Vols. 245-246, pp. 23-28, 2005
Online since
October 2005
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