Paper Title:
Growth and Characterization of Boron-Doped Si1-x-yGexCy Layers Grown by Reduced Pressure Chemical Vapor Deposition
  Abstract

In this paper, the following issues: epitaxial growth, boron incorporation and electrical properties of Si1-x-yGexCy layers grown by reduced pressure chemical vapor deposition (RPCVD) are presented. Furthermore, diffusion of carbon and boron in silicon-based material is also discussed.

  Info
Periodical
Defect and Diffusion Forum (Volumes 245-246)
Edited by
David J. Fisher
Pages
39-50
DOI
10.4028/www.scientific.net/DDF.245-246.39
Citation
H.H. Radamson, J. Hållstedt, "Growth and Characterization of Boron-Doped Si1-x-yGexCy Layers Grown by Reduced Pressure Chemical Vapor Deposition", Defect and Diffusion Forum, Vols. 245-246, pp. 39-50, 2005
Online since
October 2005
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