Growth and Characterization of Boron-Doped Si1-x-yGexCy Layers Grown by Reduced Pressure Chemical Vapor Deposition |
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| Journal | Defect and Diffusion Forum (Volumes 245 - 246) |
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| Volume | Defects and Diffusion in Semiconductors - an Annual Retrospective VIII |
| Edited by | David J. Fisher |
| Pages | 39-50 |
| DOI | 10.4028/www.scientific.net/DDF.245-246.39 |
| Online since | October, 2005 |
| Authors | H.H. Radamson, J. Hållstedt |
| Keywords | Boron Doping, Chemical Vapor Deposition, Epitaxy, SiGeC Alloys |
| Abstract | In this paper, the following issues: epitaxial growth, boron incorporation and electrical properties of Si1-x-yGexCy layers grown by reduced pressure chemical vapor deposition (RPCVD) are presented. Furthermore, diffusion of carbon and boron in silicon-based material is also discussed. |
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