Paper Title:
Identification of the Nature of Deep Trap States in Molecular Beam Epitaxially Grown Gallium Arsenide
  Abstract

  Info
Periodical
Defect and Diffusion Forum (Volumes 245-246)
Edited by
David J. Fisher
Pages
51-0
DOI
10.4028/www.scientific.net/DDF.245-246.51
Citation
N.C. Halder, "Identification of the Nature of Deep Trap States in Molecular Beam Epitaxially Grown Gallium Arsenide", Defect and Diffusion Forum, Vols. 245-246, pp. 51-0, 2005
Online since
October 2005
Authors
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: V. Dixit, H.F. Liu, N. Xiang
Abstract:Blueshifts of photoluminescence (PL) peak wavelength from GaInNAs/GaAs quantum well (QW) at various annealing temperatures have been...
209
Authors: J. Díaz-Reyes, Miguel Galvan-Arellano, R. Peña-Sierra
Abstract:This work presents the optical and structural characterization of p-type GaAs epilayers. The gallium precursor was the organometallic...
283
Authors: M. Prema Rani, R. Saravanan
Abstract:Thermal conductivity of three different GaAs crystals, one grown by Liquid Encapsulated Czochralski technique and the other two samples grown...
153
Authors: Xian Gao, Ji Long Tang, Dan Fang, Fang Chen, Shuang Peng Wang, Hai Feng Zhao, Xuan Fang, Xiao Hua Wang, Zhi Kun Xu, Xiao Hui Ma, Li Xu, Zhi Peng Wei
Chapter 3: Frontiers of Micro-Materials and Technologies, Applications
Abstract:Many researches pay attention to the metal-semiconductor interface barrier, due to its effect on device. Deliberate growing an interface...
270