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Identification of the Nature of Deep Trap States in Molecular Beam Epitaxially Grown Gallium Arsenide

Journal Defect and Diffusion Forum (Volumes 245 - 246)
Volume Defects and Diffusion in Semiconductors - an Annual Retrospective VIII
Edited by David J. Fisher
Pages 51-0
DOI 10.4028/www.scientific.net/DDF.245-246.51
Citation N.C. Halder, 2005, Defect and Diffusion Forum, 245-246, 51
Online since October, 2005
Authors N.C. Halder
Keywords Deep Trap States, GaAs, Molecular Beam Epitaxy, Schottky Junction
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