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Role of Diffusion in the Shaping of the High-Absorption State in a Resonatorless Exciton Bistable System

Journal Defect and Diffusion Forum (Volumes 245 - 246)
Volume Defects and Diffusion in Semiconductors - an Annual Retrospective VIII
Edited by David J. Fisher
Pages 9-14
DOI 10.4028/www.scientific.net/DDF.245-246.9
Citation Yuriy V. Gudyma et al., 2005, Defect and Diffusion Forum, 245-246, 9
Online since October, 2005
Authors Yuriy V. Gudyma, Ivanna V. Kruglenko
Keywords Bistable System, Nonequilibrium First-Order Transition, Switching Wave Front
Abstract

We present a unified approach to description of all the stages of shaping of a highabsorption state in a resonatorless exciton bistable system, as a nonequilibrium first-order transition. The velocity of switching wave front and thickness of interface between phases are determined within the quick switching wave approximation. The size distribution functions of subcritical and supercritical nuclei and asymptotic expression for nucleus radius were obtained.

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