Paper Title:
Slow Positron Studies of Defects in Si-Doped GaAs
  Abstract

The mechanism of slow positron annihilation in Si-doped GaAs has been discussed in terms of the diffusion trapping model (DTM). The trapping of positrons has been considered in SiAs acceptors i.e. shallow defects and in VGa-SiGa vacancy complexes. The model has been used to obtain the Doppler broadening line shape parameter (S-parameter) and average positron lifetime in Si-doped GaAs, for a temperature range 20K to 290K and for different doping concentrations. Observations are made regarding the effect of doping on the nature and concentration of point defects. The change in point defect concentration due to Si- doping has been found to be proportional to the doping concentration. The effect of detrapping from the shallow defects has been found to be important at higher temperatures.

  Info
Periodical
Defect and Diffusion Forum (Volumes 251-252)
Edited by
David J. Fisher
Pages
51-58
DOI
10.4028/www.scientific.net/DDF.251-252.51
Citation
B. Godbole, N. Badera, S.B. Shrivastava, K.P. Joshi, "Slow Positron Studies of Defects in Si-Doped GaAs", Defect and Diffusion Forum, Vols. 251-252, pp. 51-58, 2006
Online since
March 2006
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Price
$32.00
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