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Self- and Impurity Diffusion in γ-TiAl Single Crystals

Journal Defect and Diffusion Forum (Volumes 258 - 260)
Volume Diffusion in Solids and Liquids
Edited by Andreas Öchsner and José Grácio
Pages 259-269
DOI 10.4028/www.scientific.net/DDF.258-260.259
Citation Hideo Nakajima et al., 2006, Defect and Diffusion Forum, 258-260, 259
Online since October, 2006
Authors Hideo Nakajima, Y. Nose, Teruyuki Ikeda
Keywords γTiAl, Diffusion Anisotropy, Diffusion Mechanisms, Impurity Diffusion, L10-Ordered Structure, Self-Diffusion
Abstract

The diffusion coefficients of 44Ti, 63Ni and 59Fe in γ-TiAl single crystals have been measured by ion-beam sputter-sectioning technique, while those of In have been measured using ion implantation technique and secondary ion mass spectroscopy (SIMS) in order to clarify the diffusion anisotropy: the diffusion perpendicular and parallel to the [001] axis. The diffusion of Ti and In perpendicular to the [001] axis is faster than that parallel to the [001] axis. However, the diffusion anisotropies of Fe and Ni show opposite trend to those of Ti and In, namely the diffusion parallel to the [001] axis is faster than that perpendicular to the axis. The predominant process of diffusion perpendicular to the [001] axis has been discussed from a viewpoint of activation energy using the expression of the diffusion coefficients in L10-ordered alloys.

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