Paper Title:
Oxygen Self-Diffusion in Silicon Dioxide: Effect of the Si/SiO2 Interface
  Abstract

The effect of the SiO2/Si interface on oxygen self-diffusion in SiO2 during thermal oxidation was investigated using oxygen isotopes. A Si18O2 layer was first grown in 18O2 and then the sample was reoxidized in 16O2 at 900 ~ 1100 °C. The O diffusion in SiO2 during the 16O2 oxidation was investigated by secondary ion mass spectrometry (SIMS) measurements. Near the SiO2/Si interface, a significant broadening of the 18O profile toward the newly grown Si16O2 was observed. This 18O diffusion became slower with oxidation time and hence with increasing distance between 18O diffusion region and the interface. This distance-dependent 18O self-diffusion was simulated taking into account the effect of SiO generated at the interface upon oxidation and diffusing into SiO2 to enhance O self-diffusion. The simulation fits the SIMS profiles and shows that the SiO diffusion is greatly retarded by the oxidation with O2 from the oxygen-containing atmosphere and that the O self-diffusion therefore becomes distance-dependent. In addition, near the SiO2 surface, 16O diffusion profiles develop with the 16O2 oxidation time from the surface into the initially grown Si18O2. The integrated surface 16O concentration increases with oxidation time and the SiO from the interface affects the O self-diffusion near the surface as well.

  Info
Periodical
Defect and Diffusion Forum (Volumes 258-260)
Edited by
Andreas Öchsner and José Grácio
Pages
554-561
DOI
10.4028/www.scientific.net/DDF.258-260.554
Citation
M. Uematsu, M. Gunji, K. M. Itoh, "Oxygen Self-Diffusion in Silicon Dioxide: Effect of the Si/SiO2 Interface", Defect and Diffusion Forum, Vols. 258-260, pp. 554-561, 2006
Online since
October 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Boris A. Gizhevskii, Anatoly Yakovlevich Fishman, E.A. Kozlov, Tatiana Eugenievna Kurennykh, S.A. Petrova, I.Sh. Trakhtenberg, Vladimir Borisovich Vykhodets, V.B. Vykhodets, Robert Grigorievich Zakharov
Abstract:The kinetics of the isotope exchange between gaseous oxygen enriched with the 18O isotope and two LaMnO3+δ oxide samples – a nanopowder and...
233
Authors: Kenji Matsumoto, Yutaka Adachi, Takeshi Ohgaki, Isao Sakaguchi, Tsubasa Nakagawa, Naoki Ohashi, Hajime Haneda
Abstract:Zinc isotopic heterostructured zinc oxide thin films of 64ZnO/68ZnO/64ZnO were synthesized using pulsed laser deposition. The pulsed laser...
193
Authors: Alain Portavoce, Ivan Blum, Lee Chow, Jean Bernardini, Dominique Mangelinck
Abstract:The measurement of diffusion coefficients in today’s materials is complicated by the down scaling of the studied structures (nanometric...
63
Authors: Antônio Claret Soares Sabioni, Emiliane Advíncula Malheiros, Vincent Ji, François Jomard
Chapter 6: Diffusion and Corrosion Processes
Abstract:In order to investigate the role of oxygen diffusion in the oxidation process of the AISI 439 ferritic stainless steel, oxygen ion diffusion...
339