Interfacial Interaction and Diffusion in Binary Systems |
| Journal |
Defect and Diffusion Forum (Volume 263) |
| Volume |
Diffusion and Thermodynamics of Materials |
| Edited by |
J. Čermák and I. Stloukal |
| Pages |
75-80 |
| DOI |
10.4028/www.scientific.net/DDF.263.75 |
| Online since |
March, 2007 |
| Authors |
V.I. Dybkov
|
| Keywords |
Binary Systems, Compound Layer, Diffusion, Growth Kinetic, Interfacial Interaction, Sequence of Occurrence |
| Abstract |
A physico-chemical consideration of the interfacial interaction and diffusion resulting in
the formation of chemical compound layers at the interface of initial substances A and B is
presented. The layer-growth kinetics is shown to be much more complicated than it follows from
conventional diffusional views neglecting interfacial reactions. In the majority of multiphase binary
systems, layer occurrence appears to be sequential rather than simultaneous. Under conditions of
diffusion control, the number of simultaneously growing compound layers at the A–B interface
cannot exceed two. Multiple layers (three and more) can only form as a result of secondary
processes connected with the rupture of a diffusion couple. In such cases, great care is necessary
when calculating diffusion coefficients to avoid obtaining their physically meaningless values. |
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