Paper Title:
Solid-State Reactions in Ni(10 nm)/C(2 nm)/Si(001) Thin Film System
  Abstract

Annealing environment effect on the phase formation in Ni(10 nm)/C(2 nm)/Si(001) thin film system produced by sequential sputtering of C and Ni targets without vacuum breaking was under investigation. The specimens were annealed 30 s in vacuum of 1.3·10-4 Pa and in nitrogen flow in the temperature range of 450 - 1000°C. The temperature stimulated solid-state reactions that occur as the result of interdiffusion processes between layers of the thin film system under investigations were examined by X-ray - and electron diffractions, resistivity measurements and Rutherford backscattering. It was established that an annealing environment has a strong impact on the development of the solid-state reactions in Ni(10 nm)/C(2 nm)/Si(001) thin film system.

  Info
Periodical
Edited by
D. L. Beke, Z. Erdélyi and I. A. Szabó
Pages
155-158
DOI
10.4028/www.scientific.net/DDF.264.155
Citation
Y.N. Makogon, O.P. Pavlova, G. Beddies, A.V. Mogilatenko, O.V. Chukhrai, "Solid-State Reactions in Ni(10 nm)/C(2 nm)/Si(001) Thin Film System ", Defect and Diffusion Forum, Vol. 264, pp. 155-158, 2007
Online since
April 2007
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