Paper Title:
Dopant Diffusion during Amorphous Silicon Crystallization
  Abstract

We have investigated the redistribution of B during the crystallization of an amorphous Si layer homogeneously doped with P. The redistribution of B only occurs for concentrations lower than 2 × 1020 at cm−3. Crystallization leads to a non “Fickian” redistribution, allowing an abrupt interface between the regions doped and undoped with B. Once the crystallization is ended, B diffuses through the layer in the type B regime with a coefficient which is in agreement with the literature data for diffusion in polycrystalline Si. Although the P distribution is homogeneous in the entire layer, for a temperature as high as 755 °C, P diffuses towards the region the most concentrated in B. The B and P interactions are interpreted as chemical interactions.

  Info
Periodical
Edited by
D. L. Beke, Z. Erdélyi and I. A. Szabó
Pages
33-38
DOI
10.4028/www.scientific.net/DDF.264.33
Citation
A. Portavoce, R. Simola, D. Mangelinck, J. Bernardini, P. Fornara, "Dopant Diffusion during Amorphous Silicon Crystallization", Defect and Diffusion Forum, Vol. 264, pp. 33-38, 2007
Online since
April 2007
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Price
$32.00
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