Redistribution of Implanted Species in Polycrystalline Silicon Films
on Silicon Substrate
|
| Journal |
Defect and Diffusion Forum (Volume 264) |
| Volume |
Diffusion and Stresses |
| Edited by |
D. L. Beke, Z. Erdélyi and I. A. Szabó |
| Pages |
7-12 |
| DOI |
10.4028/www.scientific.net/DDF.264.7 |
| Online since |
April, 2007 |
| Authors |
F. Salman,
J. Arnold,
Peng Zhang,
Guan Gyu Chai,
Fred A. Stevie,
L. Chow
|
| Keywords |
Diffusion, Ion Implantation, Polycrystalline Silicon, Secondary Ion Mass Spectroscopy (SIMS) |
| Abstract |
Redistributions of implanted species after thermal annealing in polycrystalline silicon
(poly-silicon) were studied by secondary ion mass spectrometry. Ten different elements were
implanted into poly-silicon films grown on Si substrates. The implanted energies were chosen such
that the expected ion range is within the poly-silicon film. Thermal anneals were carried out at
temperatures between 300°C and 1000°C in flowing high purity Ar gas. Three different diffusion
behaviors have been observed for these elements. For Be, Na, Ga, and Cr, most of the implanted
ions diffused out to the surface of the poly-silicon film after anneal at 1000ºC. For K, Ca, Ti, and
Ge, the impurity ions diffused deeper into the bulk after anneal at 1000°C. For Cl and Mn ions, the
concentration distributions became narrower when annealed at high temperatures. |
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