Paper Title:
Redistribution of Implanted Species in Polycrystalline Silicon Films on Silicon Substrate
  Abstract

Redistributions of implanted species after thermal annealing in polycrystalline silicon (poly-silicon) were studied by secondary ion mass spectrometry. Ten different elements were implanted into poly-silicon films grown on Si substrates. The implanted energies were chosen such that the expected ion range is within the poly-silicon film. Thermal anneals were carried out at temperatures between 300°C and 1000°C in flowing high purity Ar gas. Three different diffusion behaviors have been observed for these elements. For Be, Na, Ga, and Cr, most of the implanted ions diffused out to the surface of the poly-silicon film after anneal at 1000°C. For K, Ca, Ti, and Ge, the impurity ions diffused deeper into the bulk after anneal at 1000°C. For Cl and Mn ions, the concentration distributions became narrower when annealed at high temperatures.

  Info
Periodical
Edited by
D. L. Beke, Z. Erdélyi and I. A. Szabó
Pages
7-12
DOI
10.4028/www.scientific.net/DDF.264.7
Citation
F. Salman, J. Arnold, P. Zhang, G. G. Chai, F. A. Stevie, L. Chow, "Redistribution of Implanted Species in Polycrystalline Silicon Films on Silicon Substrate ", Defect and Diffusion Forum, Vol. 264, pp. 7-12, 2007
Online since
April 2007
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$32.00
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