Paper Title:
Raman Investigation of Stress for Shallow Trench
  Abstract

A trench is used as a storage capacitor in dynamic memory (DRAM) technologies (deep storage trenches), or as an isolation structure in CMOS, bipolar and BiCMOS technologies. But a shallow trench structure has also been shown to be a major factor in substrate defect generation during processing. Such defect generation is directly related to mechanical stresses existing around the trench. This stress can be monitored, using Raman spectroscopy, to a stress resolution of 10MPa and a spatial resolution of 0.2μm. In this paper, a trench structure is designed and fabricated, and the test results for local stresses within the trench are shown to be in good correspondence with theory.

  Info
Periodical
Edited by
David J. Fisher
Pages
1-6
DOI
10.4028/www.scientific.net/DDF.265.1
Citation
S. B. Sang, C. Y. Xue, W. D. Zahng, J. J. Xiong, "Raman Investigation of Stress for Shallow Trench", Defect and Diffusion Forum, Vol. 265, pp. 1-6, 2007
Online since
May 2007
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Price
$32.00
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