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Defects and Diffusion in Semiconductors X

Volume 272
doi: 10.4028/www.scientific.net/DDF.272
Abstracts
Paper Titles published in this Main Theme:
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Paper Title Page

New Method to Determine Young’s Modulus of Micro Crystal Based on Raman Spectrometer

Authors: Sheng Bo Sang

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Change of Properties of CMOS Image Sensor Irradiated with 9 and 16 MeV Protons

Authors: Xiang Ti Meng, Qiang Huang, Xing Yu Wang, Yong Nan Zheng, Ping Fan, Sheng Yun Zhu

7

Solid-State Reaction in Al-Fe Binary System Induced by Mechanical Alloying

Authors: S.H. Kaytbay, S.F. Moustafa, W.M. Daoush

15

Thermal Behaviour of Xenon in a Refractory Metal for Gas Fast Reactor Fuel Elements

Authors: C. Viaud, G. Carlot, P. Garcia, P. Martin, N. Millard-Pinard, N. Moncoffre, C. Peaucelle, Thierry Sauvage, N. Toulhoat

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Solid-Phase Diffusion Interaction in Multilayer Thin-Film System Cr/Cu/Ni at Pulse Laser Heating

Authors: M. Vasylyev, M.M. Nishenko, Sergey I. Sidorenko, S.M. Voloshko

31

Molecular Dynamics Simulation of Brittle Fracture in Bcc Iron

Authors: Hong Xian Xie, Chong Yu Wang, Tao Yu

41

Diffusion in the AlMo3 Ordered Intermetallic

Authors: M.I. Pascuet, Julián R. Fernández, A.M. Monti

51

First-Principles Investigation of the Alloying Effect of Mn and Cr in the Kink on the Edge Dislocation in BCC Iron

Authors: Zheng Chen Qiu, Li Qun Chen

61

Mathematical Modeling of Interface Movement during Diffusional Bonding of Surfaces

Authors: Rabindranath Ray

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Growth Kinetics of Boride Layers: A Modified Approach

Authors: Ivan Campos-Silva, M. Ortíz-Domínguez, C. VillaVelázquez, R. Escobar, N. López

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