Solid-Phase Diffusion Interaction in Multilayer Thin-Film System Cr/Cu/Ni at Pulse Laser Heating |
| Journal |
Defect and Diffusion Forum (Volume 272) |
| Volume |
Defects and Diffusion in Semiconductors X |
| Edited by |
D. J. Fisher |
| Pages |
31-40 |
| DOI |
10.4028/www.scientific.net/DDF.272.31 |
| Online since |
March, 2008 |
| Authors |
M. Vasylyev,
M.M. Nishenko,
S.I. Sidorenko,
S.M. Voloshko
|
| Keywords |
Diffusion Coefficient, Laser Action, Mass Transfer, Surface Layer, Thin Film System |
| Abstract |
The laser-induced mass transfer in thin-film substrate /Cr/Cu/Ni system is studied by
means of Auger Electron Spectroscopy (AES). For the laser-pulse energy values, E = 100-170mJ,
the diffusion of Cu atoms into Ni layer and their accumulation within this layer are observed,
whereas at E > 170mJ the same is true for Cr atoms. The observed phenomena are explained on the
basis of calculated temperature distribution in the system at issue during lased action. Enhanced
transfer of Cr atoms towards external surface is observed under the irradiation regimes leading to
the melting of intermediate copper layer. Diffusion coefficients of copper and chromium calculated
from their surface accumulation show an exponential dependence on the laser-pulse energy. Under
laser heating, the diffusion processes are more manifested as compared with those under
conventional thermal annealing. This is bound up with higher concentration of nonequilibrium
defects generated within the irradiation zone. |
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