Change of Properties of CMOS Image Sensor Irradiated with 9 and 16 MeV Protons |
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| Journal | Defect and Diffusion Forum (Volume 272) |
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| Volume | Defects and Diffusion in Semiconductors X |
| Edited by | D. J. Fisher |
| Pages | 7-14 |
| DOI | 10.4028/www.scientific.net/DDF.272.7 |
| Citation | Xiang Ti Meng et al., 2008, Defect and Diffusion Forum, 272, 7 |
| Online since | March, 2008 |
| Authors | Xiang Ti Meng, Qiang Huang, Xing Yu Wang, Yong Nan Zheng, Ping Fan, Sheng Yun Zhu |
| Keywords | Average Brightness, CMOS Image Sensor, Non-Uniformity, Proton Irradiation |
| Abstract | The 9 and 16 MeV proton irradiations of CMOS Image Sensor in the fluence range from 5x108 to 4x1010 cm-2 and 5x109 to 1x1013 cm-2 have been carried out respectively. The color pictures and dark output images are captured, and the average brightness of dark output images is calculated. The anti-irradiation fluence thresholds for 9 and 16 MeV protons are about 4x1010 and 5x1012cm-2, respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program. |
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