Paper Title:
Change of Properties of CMOS Image Sensor Irradiated with 9 and 16 MeV Protons
  Abstract

The 9 and 16 MeV proton irradiations of CMOS Image Sensor in the fluence range from 5x108 to 4x1010 cm-2 and 5x109 to 1x1013 cm-2 have been carried out respectively. The color pictures and dark output images are captured, and the average brightness of dark output images is calculated. The anti-irradiation fluence thresholds for 9 and 16 MeV protons are about 4x1010 and 5x1012cm-2, respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program.

  Info
Periodical
Edited by
D. J. Fisher
Pages
7-14
DOI
10.4028/www.scientific.net/DDF.272.7
Citation
X. T. Meng, Q. Huang, X. Y. Wang, Y. N. Zheng, P. Fan, S. Y. Zhu, "Change of Properties of CMOS Image Sensor Irradiated with 9 and 16 MeV Protons", Defect and Diffusion Forum, Vol. 272, pp. 7-14, 2007
Online since
March 2008
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