Growth Kinetics of Boride Layers: A Modified Approach |
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| Journal | Defect and Diffusion Forum (Volume 272) |
|---|---|
| Volume | Defects and Diffusion in Semiconductors X |
| Edited by | D. J. Fisher |
| Pages | 79-86 |
| DOI | 10.4028/www.scientific.net/DDF.272.79 |
| Citation | Ivan Campos-Silva et al., 2008, Defect and Diffusion Forum, 272, 79 |
| Online since | March, 2008 |
| Authors | Ivan Campos-Silva, M. Ortíz-Domínguez, C. VillaVelázquez, R. Escobar, N. López |
| Keywords | Boride Layer, Diffusion Coefficient, Growth Kinetic, Mass Balance Equation, Paste Boriding Process |
| Abstract | This study evaluates the boron diffusion in the Fe2B phase formed at the surface of AISI 1018 steels during the paste boriding process. The treatment was carried out at temperatures of 1123, 1173, 1223 and 1273 K with 2, 4, 5, 6 and 8 h exposure times for each temperature using a 4 mm layer thickness of boron carbide paste over the material surface. The boron diffusion coefficient Fe2B D was determined by the mass balance equation and the boride incubation time assuming that the boride layers obey the parabolic growth law, while the boron concentration profile along the interphase Fe2B/substrate was unknown. The boron diffusion coefficient was interpreted as a function of the treatment temperature, obtaining the activation energy value for diffusion controlled growth of Fe2B boride phase. |
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