Structure and Optical Properties of Magnetron Sputtered SiOx Layers with Silicon Nanoparticles |
| Journal |
Defect and Diffusion Forum (Volume 272) |
| Volume |
Defects and Diffusion in Semiconductors X |
| Edited by |
D. J. Fisher |
| Pages |
87-98 |
| DOI |
10.4028/www.scientific.net/DDF.272.87 |
| Online since |
March, 2008 |
| Authors |
L. Khomenkova,
N. Korsunska,
T. Stara,
Y. Goldstein,
J. Jedrzejewski,
E. Savir,
C. Sada,
Y. Emirov
|
| Keywords |
Atomic Force Microscopy (AFM), Raman Scattering, Si Nanoparticles, SiOx Decomposition |
| Abstract |
The properties of SiOx layer prepared by magnetron sputtering is studied by photoluminescence
Auger and SIMS methods. The depth distribution of emission characteristics and chemical
composition is obtained. It is shown that as-sputtered SiOx layers are non-emitted and characterized
by homogeneous enough chemical composition. High-temperature annealing in nitrogen
atmosphere stimulates not only the Si nanocrystal formation but also the redistribution of silicon
and the appearance of Si depleted region near layer-substrate interface. The last process is found to
be dependent on excess Si content. It is found that decrease of silicon content in the depth of
annealed layers is followed by the decrease of particle sizes that is proved by the blue shift of
photoluminescence maximum. The possible reasons of the appearance of Si depleted region are
discussed. |
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