Reaction of Iron with Amorphous Silicon and Crystal Silicon for the Fabrication of Iron Silicides |
| Journal |
Defect and Diffusion Forum (Volume 272) |
| Volume |
Defects and Diffusion in Semiconductors X |
| Edited by |
D. J. Fisher |
| Pages |
99-106 |
| DOI |
10.4028/www.scientific.net/DDF.272.99 |
| Online since |
March, 2008 |
| Authors |
Dao Ren Gong,
Dong Sheng Li,
Zhi Zhong Yuan,
De Ren Yang
|
| Keywords |
Amorphous Silicon, Diffusion, Iron Silicide, Single Crystal Silicon |
| Abstract |
Iron silicide films with two different structures were fabricated by electron beam
evaporation (EBE) technique. X-ray diffraction (XRD), Fourier transform infrared (FTIR) and
scanning electron microscope (SEM) were carried out to describe the characteristics and structures of
the films. It was found that after annealing at 800oC for 5 h, the β-FeSi2 film formed in the sample
with the structure of Si/Fe film on silicon substrate, while only FeSi film generated in the sample with
the structure of Si/Fe/Si films on silicon substrate. It is considered that the different iron silicides may
be due to the different reaction of iron with crystal silicon or amorphous silicon, which is related to
diffusion of iron or silicon atoms. |
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