Paper Title:
Point Defects Characterization in Quenched δ-Ni2Si as Deduced from Isothermal Magnetic Susceptibility Measurements
  Abstract

The behaviour of quenched defects in Ni2Si compound is studied by isothermal susceptibility magnetic measurements. In the range of temperature 553-593K, where an enhancement of susceptibility has been previously detected by isochronal measurements, an activation energy (EA=2.5 ± 0.2 eV) is determined. This value is in agreement with the break-up of 3D nickel vacancy clusters, formed at lower temperatures, and the subsequent formation of nickel rich defects via the released vacancies.

  Info
Periodical
Defect and Diffusion Forum (Volumes 273-276)
Edited by
Andreas Öchsner and Graeme E. Murch
Pages
312-317
DOI
10.4028/www.scientific.net/DDF.273-276.312
Citation
A. Jennane, O. Sassi, J. Aride, J. Bernardini, G. Moya, "Point Defects Characterization in Quenched δ-Ni2Si as Deduced from Isothermal Magnetic Susceptibility Measurements ", Defect and Diffusion Forum, Vols. 273-276, pp. 312-317, 2008
Online since
February 2008
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