Paper Title:

Co Anomalous Growth Kinetics of the CoSi Reaction Layer in a Si/System

Periodical Defect and Diffusion Forum (Volumes 273 - 276)
Main Theme Diffusion in Solids and Liquids III
Edited by Andreas Öchsner and Graeme E. Murch
Pages 99-104
DOI 10.4028/www.scientific.net/DDF.273-276.99
Citation Csaba Cserháti et al., 2008, Defect and Diffusion Forum, 273-276, 99
Online since February, 2008
Authors Csaba Cserháti, Györgyi Glodán, A. Csik, G.A. Langer, Z. Erdélyi, Z. Balogh, Dezső L. Beke
Keywords Non-Parabolic Growth Kinetic, Silicide, Solid State Reaction
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Abstract

Solid state reactions between amorphous Si and crystalline Co have been investigated by 4W electrical resistance and TEM. Multilayered (with 10 periods of 5nm a-Si/5nm Co and 10 nma- Si/10nm Co layers) as well as tri-layered samples (20nm a-Si/3nmCoSi/6nm Co) were produced by magnetron sputtering and isothermally heat treated at different temperatures between 473 and 523K. From the time evolution of the normalized resistance the kinetics of the process were determined by fitting a power law, tk, and k was between 0.8 and 1. Possibility of the interface reaction control and/or the effect of the diffusion asymmetry (which was recently published for the non-parabolic interface shifts on the nanoscale) will be discussed.