Paper Title:
Diffusion Formation of Silicide Phases in Ni/Si(001) Nanodimensional Film System
  Abstract

Thermally stimulated solid state reactions in the Ni(10 nm)/Si(001) film system that occur under the annealing in the nitrogen ambient were researched by methods of сross-sectional transmission electron microscopy and scanning electron microscope. It was established that NiSi2 formation consists of several steps: a formation of the NiSi polycrystalline silicide thickness of which twice higher initial thickness of Ni layer; prevailed diffusion of Ni atoms out of NiSi into Si substrate according with lattice mechanism and appearing of exceeding vacancies at grain boundaries; a formation of epitaxial NiSi2 nuclei at separate spots of NiSi/Si(001) interface; regular growth of NiSi2 phase inclusions at the expense of NiSi layer “diffusion dissolution”; a formation of NiSi2 spherical inclusions in the lattice of Si matrix and their coalescence.

  Info
Periodical
Defect and Diffusion Forum (Volumes 280-281)
Edited by
David J. Fisher
Pages
9-14
DOI
10.4028/www.scientific.net/DDF.280-281.9
Citation
S. I. Sidorenko, Y.N. Makogon, S.M. Voloshko, O.P. Pavlova, I.E. Kotenko, A.V. Mogilatenko, G. Beddies, "Diffusion Formation of Silicide Phases in Ni/Si(001) Nanodimensional Film System", Defect and Diffusion Forum, Vols. 280-281, pp. 9-14, 2008
Online since
November 2008
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Price
$32.00
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