Paper Title:
Early Stage of Solid State Interfacial Reaction between Copper and Tin
  Abstract

High-purity plates of Cu and Sn were diffusion bonded to clarify the early stage of the solid state interfacial reaction between Cu and Sn, focusing on the incubation time for the formation of intermetallic compounds. A clear incubation time for the formation of intermetallic compounds is observed at every temperature between 423 and 493 K. The incubation time changes depending on the annealing temperature. The interface annealed at 423 K for 3.60 ks maintains the direct interconnection between Cu and Sn being free of intermetallic compounds. The exposure of Cu surface to air affects the interfacial reaction. Annealing of the Cu/Sn interface at 493 K for 3600 s starts to form voids by using the Cu plates exposed for 8.64×104 s or longer to air. Furthermore, the reaction product layer formed by the same annealing condition becomes thinner when the Cu plates exposed for 8.64×105 s or longer to air are used.

  Info
Periodical
Defect and Diffusion Forum (Volumes 283-286)
Edited by
Andreas Öchsner, Graeme E. Murch and Ali Shokuhfar
Pages
323-328
DOI
10.4028/www.scientific.net/DDF.283-286.323
Citation
M. Maeda, N. Inoue, T. Sato, Y. Takahashi, "Early Stage of Solid State Interfacial Reaction between Copper and Tin", Defect and Diffusion Forum, Vols. 283-286, pp. 323-328, 2009
Online since
March 2009
Export
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Jie Dong, Z.F. Li, Xiao Qin Zeng, Wen Jiang Ding
Abstract:Intermediate phase growth in Mg-Al diffusion couples were studied with different intensity of a strong static magnetic field from 0 to 10...
491
Authors: Ida E. Tyschenko, A.G. Cherkov, M. Voelskow, V.P. Popov
Abstract:The behavior of Sb and In atoms embedded into silicon-on-insulator structure (SOI) near the bonding interface was investigated as a function...
137
Authors: Jae Seol Lee, Hyeon Taek Son, Toyohiko Yano
Abstract:The layers of ZrO2-Al2O3 were coated on the surface of SiC fibers (Tyranno SA fiber) by dip-coating process. The citric acid-ethylene glycol...
1386
Authors: Omar Abbes, Feng Xu, Alain Portavoce, Christophe Girardeaux, Khalid Hoummada, Vinh Le Thanh
Chapter 8: Diffusion in Electronic Materials
Abstract:An alternative solution for producing logic devices in microelectronics is spintronics (SPIN TRansport electrONICS). It relies on the fact...
439
Authors: Lin Yang, Bing Xue Mi, Lin Lv, Hong Jun Huang, Xiao Ping Lin, Xiao Guang Yuan
Abstract:The formation Gibbs energy of the intermetallic phases at the interface of cold rolling Cu/Al clad metal sheet in annealing process was...
600