Paper Title:
Current-Voltage Measurements on Indium Phosphide Schottky Diodes
  Abstract

In this paper, current-voltage (i-Vg) results from different kinds of n-type InP Schottky diodes are reported. The diodes were fabricated on an unintentionally doped n-type (100) indium phosphide substrate, and the i-Vg characteristics were measured in the temperature range 100 300 K. For the ideality factor, n always exhibited a small (1) but continuous increase with the voltage. At higher forward voltage, slightly higher values of n were due to series resistance effect; in other words, the interface state density always remained small. However, it was possible to obtain some information in the case of discrete interface traps. It was shown that i-Vg measurements can be used as a fast method to determine the densities of the interface states when they equilibrate with the semiconductor.

  Info
Periodical
Defect and Diffusion Forum (Volumes 283-286)
Edited by
Andreas Öchsner, Graeme E. Murch and Ali Shokuhfar
Pages
577-582
DOI
10.4028/www.scientific.net/DDF.283-286.577
Citation
C. A.C. Sequeira, D. M.F. Santos, "Current-Voltage Measurements on Indium Phosphide Schottky Diodes", Defect and Diffusion Forum, Vols. 283-286, pp. 577-582, 2009
Online since
March 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Roman Yatskiv, Karel Zdansky, Jan Grym
Abstract:We investigated Schottky diode hydrogen sensors prepared by printing colloidal graphite on ZnO, GaN, and InP substrates partly covered with...
159
Authors: Ting Ting Jia, Xin Hong Cheng, Duo Cao, Da Wei Xu, Zhong Jian Wang, Chao Xia, Li Zheng, Yue Hui Yu
Chapter 1: Novel and Advanced Materials, Materials Science and Technologies
Abstract:In situ NH3 plasma nitridation was utilized to passivate InP surface, HfLaOx film was grown by plasma...
67
Authors: Gerard Colston, Maksym Myronov, Stephen Rhead, Vishal Shah, Yogesh Sharma, Phil Mawby, David Leadley
Chapter IV: SiC Devices and Circuits
Abstract:Vertical Schottky diodes have been fabricated on low C content Si1-xCx and 3C-SiC epilayers epitaxially grown on...
571