Paper Title:
Sedimentation of Impurity Atoms in InSb Semiconductor under a Strong Gravitational Field
  Abstract

An atomic-scale graded structure has been formed by sedimentation of substitutional atoms under an ultra-strong gravitational field of 1 million G level in alloys and compounds. In this study, we investigate the sedimentation of impurity atoms in semiconductor materials under a strong gravitational field. High-temperature ultracentrifuge experiments (0.59×106 G, 400°C, 60 hours) have been performed on an InSb single crystal wafer which surface was coated with Ge by means of Physical Vapor Deposition (PVD). It was observed that the penetration depth of diffused Ge atoms under the gravitational field was several times larger than under terrestrial field at the same temperatures.

  Info
Periodical
Defect and Diffusion Forum (Volumes 289-292)
Edited by
A. Agüero, J.M. Albella, M.P. Hierro, J. Phillibert and F.J. Pérez Trujillo
Pages
319-322
DOI
10.4028/www.scientific.net/DDF.289-292.319
Citation
Y. Iguchi, M. Ono, S. Okayasu, T. Mashimo, "Sedimentation of Impurity Atoms in InSb Semiconductor under a Strong Gravitational Field", Defect and Diffusion Forum, Vols. 289-292, pp. 319-322, 2009
Online since
April 2009
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$32.00
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