Paper Title:
Atom Redistribution during co-Doped Amorphous Silicon Crystallization
  Abstract

Atom redistribution during crystallization of a B and P co-doped amorphous Si layer produced by Si and P chemical vapor co-deposition and B implantation has been investigated. The crystallization of the entire layer is quasi-instantaneous for annealing temperature greater than 650 °C. The crystallization rate is well reproduced by the Avrami-Johnson-Mehl-Kolmogorov model of transformation. The Avrami n is found equal to 4, which is corresponding to 3D bulk crystallization. Crystallization promotes a non-Fickian redistribution of B atoms, allowing for an abrupt interface between B-doped and B-undoped regions. After crystallization, B diffuses in the polycrystalline Si layer for concentrations lower than 1.5  1020 at cm3 via the type B kinetic regime. Crystallization has no significant (or detectable) influence on the P profile. For temperatures higher than 750 °C, P diffuses in the poly-Si layer towards the region of highest B concentration via the type B kinetic regime, leading to P uphill diffusion. This phenomenon can be simulated considering chemical interactions between B and P atoms in both grains and grain boundaries.

  Info
Periodical
Defect and Diffusion Forum (Volumes 289-292)
Edited by
A. Agüero, J.M. Albella, M.P. Hierro, J. Phillibert and F.J. Pérez Trujillo
Pages
329-337
DOI
10.4028/www.scientific.net/DDF.289-292.329
Citation
A. Portavoce, D. Mangelinck, R. Simola, R. Daineche, J. Bernardini, "Atom Redistribution during co-Doped Amorphous Silicon Crystallization", Defect and Diffusion Forum, Vols. 289-292, pp. 329-337, 2009
Online since
April 2009
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$32.00
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