Paper Title:
Characterization of Intermetallic Layer with Nanoresolution Using X-Ray Standing Wave Technique
  Abstract

X-ray standing wave technique has been used to measure the kinetics of CoSi intermetallic phase growth in a-Si/Co/a-Si sandwich structure. The a-Si/Co/a-Si arrangement were placed into a waveguide structure formed by two Ta films. X-ray fluorescence and extended X-ray absorption fine structure analysis has been used in a combination with X-ray standing wave technique for depth profiling with sub-nanometer resolution of specimens annealed at 493K for different annealing time. The position and the thickness of the growing CoSi intermetallic phase have been monitored.

  Info
Periodical
Defect and Diffusion Forum (Volumes 289-292)
Edited by
A. Agüero, J.M. Albella, M.P. Hierro, J. Phillibert and F.J. Pérez Trujillo
Pages
369-375
DOI
10.4028/www.scientific.net/DDF.289-292.369
Citation
C. Cserháti, Z. Erdélyi, Z. Balogh, L. Daróczi, A. Csik, G.A. Langer, M. Varga, I. Zizak, A. Erko, D. L. Beke, "Characterization of Intermetallic Layer with Nanoresolution Using X-Ray Standing Wave Technique", Defect and Diffusion Forum, Vols. 289-292, pp. 369-375, 2009
Online since
April 2009
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Price
$32.00
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