Paper Title:
Study of Oxygen Diffusion in Polycrystalline ZnO by SIMS
  Abstract

Oxygen diffusion coefficients were measured in polycrystalline ZnO by means of the gas-solid exchange method using the isotope 18O as the oxygen tracer. The diffusion annealings were performed at 892oC and 992oC, in an Ar+18O2 atmosphere under oxygen partial pressures from 0.1 to 1atm. After the diffusion annealings, the 18O diffusion profiles were established by secondary ion mass spectrometry (SIMS). Increasing the oxygen pressure leads to an increase of the oxygen diffusion in ZnO. The bulk diffusion coefficients depends on oxygen pressure according to , at 882oC, or , at 992oC, which indicates that the oxygen bulk diffusion mechanism should preferentially take place by means of interstitial oxygen having a null effective charge. The grain boundary diffusion coefficients show little dependence on oxygen pressure at 882oC, given by , which should correspond to a diffusion mechanism by means of interstitial oxygen, with a double negative charge, but at 992oC this dependence is corresponding to a diffusion mechanism by interstitial oxygen having a null effective charge. The results also show that the grain boundary is a fast path for the oxygen diffusion in polycrystalline ZnO.

  Info
Periodical
Defect and Diffusion Forum (Volumes 289-292)
Edited by
A. Agüero, J.M. Albella, M.P. Hierro, J. Phillibert and F.J. Pérez Trujillo
Pages
523-530
DOI
10.4028/www.scientific.net/DDF.289-292.523
Citation
A. C. S. Sabioni, A. M. J.M. Daniel, A. M. Huntz, W. B. Ferraz, F. Jomard, "Study of Oxygen Diffusion in Polycrystalline ZnO by SIMS", Defect and Diffusion Forum, Vols. 289-292, pp. 523-530, 2009
Online since
April 2009
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$32.00
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