Paper Title:
Impact of Carbon on the Diffusion of Donor Atoms in Germanium
  Abstract

We report experiments on the diffusion of n-type dopants in isotopically controlled Ge multilayer structures doped with carbon. The diffusion profiles reveal a strong aggregation of the dopants within the carbon-doped layers and a retarded penetration depth compared to dopant diffusion in high purity natural Ge. Dopant aggregation and diffusion retardation is strongest for Sb and similar for P and As. Successful modeling of the simultaneous self- and dopant diffusion is performed on the basis of the vacancy mechanism and additional reactions that take into account the formation of carbon-vacancy-dopant and dopant-vacancy complexes. The stability of these complexes is confirmed by density functional theory calculations. The overall consistency between experimental and theoretical results supports the stabilization of donor-vacancy complexes in Ge by the presence of carbon and the dopant deactivation via the formation of dopant-vacancy complexes. These results help to develop concepts to suppress the enhanced diffusion of n-type dopants and the donor deactivation in Ge. Both issues hamper the formation of ultra shallow donor profiles with high active dopant concentrations that are required for the fabrication of Ge-based n-type metal oxide semiconductor field effect transistors.

  Info
Periodical
Defect and Diffusion Forum (Volumes 289-292)
Edited by
A. Agüero, J.M. Albella, M.P. Hierro, J. Phillibert and F.J. Pérez Trujillo
Pages
689-696
DOI
10.4028/www.scientific.net/DDF.289-292.689
Citation
H. Bracht, S. Brotzmann, A. Chroneos, "Impact of Carbon on the Diffusion of Donor Atoms in Germanium", Defect and Diffusion Forum, Vols. 289-292, pp. 689-696, 2009
Online since
April 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Haruki Ryoken, Isao Sakaguchi, Naoki Ohashi, Yutaka Adachi, Takeshi Ohgaki, Shunichi Hishita, Hajime Haneda
Abstract:The defect structure of undoped ZnO and (Zn1-x,Mgx)O solid-solution films were deposited on YSZ substrate with pulsed laser deposition (PLD)...
103
Authors: Rodolfo A. Pérez, Patrick Gas, Philippe Maugis
Abstract:Experiments of niobium diffusion at infinite dilution and Nb reaction-diffusion in pure iron and in ferrites with different amounts of...
163
Authors: Kenji Matsumoto, Yutaka Adachi, Takeshi Ohgaki, Isao Sakaguchi, Tsubasa Nakagawa, Naoki Ohashi, Hajime Haneda
Abstract:Zinc isotopic heterostructured zinc oxide thin films of 64ZnO/68ZnO/64ZnO were synthesized using pulsed laser deposition. The pulsed laser...
193
Authors: Alain Portavoce, Ivan Blum, Lee Chow, Jean Bernardini, Dominique Mangelinck
Abstract:The measurement of diffusion coefficients in today’s materials is complicated by the down scaling of the studied structures (nanometric...
63