Paper Title:
Positron Annihilation in Ion-Implanted ZnO
  Abstract

The Diffusion Trapping Model has been used to obtain the positron annihilation Doppler broadening lineshape parameter in ZnO and O+, B+, N+, Al+ implanted ZnO films. The concentration of vacancy clusters is found to be related to the atomic number and the fluence of the implanted ion. The S-parameter is found to be largest in the case of implantation of Al+ ions and is minimum for the implantation of B+ ions. Thus, the vacancy clusters are found to be largest in the case of Al+ implantation. The calculated results have been compared with the experimental value.

  Info
Periodical
Defect and Diffusion Forum (Volumes 295-296)
Edited by
David J. Fisher
Pages
1-10
DOI
10.4028/www.scientific.net/DDF.295-296.1
Citation
A. D. Acharya, G. Singh, S.B. Shrivastava, "Positron Annihilation in Ion-Implanted ZnO", Defect and Diffusion Forum, Vols. 295-296, pp. 1-10, 2009
Online since
January 2010
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Price
$32.00
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