Positron Annihilation in Ion-Implanted ZnO |
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| Journal | Defect and Diffusion Forum (Volumes 295 - 296) |
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| Volume | Defects and Diffusion in Ceramics XI |
| Edited by | David J. Fisher |
| Pages | 1-10 |
| DOI | 10.4028/www.scientific.net/DDF.295-296.1 |
| Citation | Aman Deep Acharya et al., 2010, Defect and Diffusion Forum, 295-296, 1 |
| Online since | January, 2010 |
| Authors | Aman Deep Acharya, Girjesh Singh, S.B. Shrivastava |
| Keywords | Defect, Diffusion, Ion-Implantation, Monoenergetic Positron Beam, Positron Annihilation, ZnO |
| Abstract | The Diffusion Trapping Model has been used to obtain the positron annihilation Doppler broadening lineshape parameter in ZnO and O+, B+, N+, Al+ implanted ZnO films. The concentration of vacancy clusters is found to be related to the atomic number and the fluence of the implanted ion. The S-parameter is found to be largest in the case of implantation of Al+ ions and is minimum for the implantation of B+ ions. Thus, the vacancy clusters are found to be largest in the case of Al+ implantation. The calculated results have been compared with the experimental value. |
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