Paper Title:
Clustering of Arsenic Atoms in Silicon during Low-Temperature Annealing
  Abstract

Simulation of arsenic clustering in Si at a temperature of 750 degrees Celsius has been carried out. It has been shown that considering the formation of singly or doubly negatively charged clusters that incorporate one or two arsenic atoms and point defects, one obtains a good fit to the measured values of electron density. It is supposed that we have the initial stage of clustering, when the concentration of complexes with one arsenic atom incorporated is high enough and the diffusion of these mobile particles provides for the formation of more stable clusters incorporating two arsenic atoms.

  Info
Periodical
Defect and Diffusion Forum (Volumes 295-296)
Edited by
David J. Fisher
Pages
27-32
DOI
10.4028/www.scientific.net/DDF.295-296.27
Citation
O. Velichko, O. Burunova, "Clustering of Arsenic Atoms in Silicon during Low-Temperature Annealing", Defect and Diffusion Forum, Vols. 295-296, pp. 27-32, 2009
Online since
January 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Ida E. Tyschenko, A.G. Cherkov, M. Voelskow, V.P. Popov
Abstract:The behavior of Sb and In atoms embedded into silicon-on-insulator structure (SOI) near the bonding interface was investigated as a function...
137
Authors: Fuccio Cristiano, El Mehdi Bazizi, Pier Francesco Fazzini, Simona Boninelli, Ray Duffy, Ardechir Pakfar, Silke Paul, Wilfried Lerch
Abstract:In this paper, we investigate the evolution of extended defects during a millisecond Flash anneal after a preamorphising implant. The...
269