Paper Title:
Atomic Contribution to Valence Band Density of States in Gallium Oxide and Silicon Oxide Nano Layered Films
  Abstract

High resolution X-ray photoelectron spectroscopy (XPS) is used to investigate the spectra of nanolayered films. Amorphous gallium oxide (Ga2O3)-silicon dioxide (SiO2) nanolayered thin films are grown using ultrahigh vacuum radio frequency (rf) magnetron sputtering on sapphire substrates at room temperature. Films are layered with 15-angstrom Ga2O3 oxide and 75-angstrom SiO2 for a total of 10 layers. Referring to atomic core levels, atomic contribution to valence band density of states is experimentally nominated. This analytical technique has particular applicability to the evaluation of the density of states with atomic contributions.

  Info
Periodical
Defect and Diffusion Forum (Volumes 297-301)
Edited by
Andreas Öchsner, Graeme E. Murch, Ali Shokuhfar and João M.P.Q. Delgado
Pages
849-852
DOI
10.4028/www.scientific.net/DDF.297-301.849
Citation
T. Takeuchi, J. Nishinaga, A. Kawaharazuka, Y. Horikoshi, "Atomic Contribution to Valence Band Density of States in Gallium Oxide and Silicon Oxide Nano Layered Films", Defect and Diffusion Forum, Vols. 297-301, pp. 849-852, 2010
Online since
April 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: S. Intarasiri, Anders Hallén, A. Razpet, Somsorn Singkarat, G. Possnert
Abstract:Formation and crystallization of a thin near-surface layer of silicon carbide on a silicon substrate, created by ion-beam synthesis (IBS),...
51
Authors: Yong Zhao, Shuo Hou, Xiao Jun Liang, Li Guang Fang, Guang Hu Sheng, Fei Xu
Abstract:Dry and wet oxidation silica films doped with silicon ions were prepared using metal vapor vacuum arc (MEVVA) ion source implanter. The does...
1450
Authors: Hui Qing Lan, Zheng Ling Kang
Abstract:The growth of amorphous carbon films via deposition is investigated using molecular dynamics simulation with a modified Tersoff potential....
2220
Authors: Yu.A. Babanov, Yu.A. Salamatov, E. Kh. Mukhamedzhanov
Abstract:A new method for studying multilayer structure using angle resolved XAFS measurements is proposed. The integral equation describing the...
307
Authors: Sheng Lung Tu, Yen Hsun Su, Yun Hwei Shen, Dah Tong Ray, Yu Chun Wu, Tao Hsing Chen
Chapter 1: Materials Engineering and Processing Technologies of Materials
Abstract:In this study, nano-titanium films of different thickness were deposited. By adjusting it is found that when the thickness of the titanium...
50