Non-Gaussian Local Density Diffusion (LDD-) Model for Boron Diffusion in Si- and SixGe1-x Ultra-Shallow Junction Post-Implant and Advanced Rapid-Thermal-Anneals
|Periodical||Defect and Diffusion Forum (Volumes 305 - 306)|
|Main Theme||Defects and Diffusion in Metals XII|
|Edited by||David J. Fisher|
|Citation||Frank Wirbeleit, 2010, Defect and Diffusion Forum, 305-306, 71|
|Online since||October, 2010|
|Keywords||Boron, Diffusion, Germanium, Implant, Non-Gaussian Diffusion Model, SiGe, Silicon, Ultra Shallow Junction|
Boron diffusion after implant and anneal has been studied extensively in the past, without de-convoluting the Boron diffusion behavior by the initial post implant Boron concentration profile, which is done in this work first time. To support the de-convolution approach, the local density diffusion (LDD) model is selected, because this model is based on just one single arbitrary diffusion parameter per atomic species and host lattice combination. The LDD model is used for Phosphorus and Arsenic diffusion so far and an extension to simulate Boron diffusion in presence of Boron clusters is presented here. As the result, maximum Boron penetration depth post different rapid thermal anneals and the quantification of diffusing and clustering (non-diffusing) Boron in silicon and silicon-germanium host lattice systems are given.