Non-Gaussian Local Density Diffusion (LDD-) Model for Boron Diffusion in Si- and SixGe1-x Ultra-Shallow Junction Post-Implant and Advanced Rapid-Thermal-Anneals

Wirbeleit, Frank

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Paper Titles

Density Functional Theory Study of Kink with P in BCC Iron, p.39
Formulation of Impurity-Vacancy Pair Formation Energy in Fast Diffusion, p.49
Theoretical Study of the Local Distortion for Ni⁺ in Magnesium Oxide, p.55
A Study of the Physical Properties of Te₁₅(Se_100-xBi_x)₈₅ Glassy Alloys, p.61
Non-Gaussian Local Density Diffusion (LDD-) Model for Boron Diffusion in Si- and Si_xGe_1-x Ultra-Shallow Junction Post-Implant and Advanced Rapid-Thermal-Anneals, p.71
Studies of the EPR Parameters and Local Structure for the Cu²⁺ Center in Lanthanum Magnesium Nitrate, p.85
Synthesis and Characterization of Zinc Phosphates in Aqueous and Non-Aqueous Media with (2-Hydroxyethyl) Trimethyl Ammonium Hydroxide as Template, p.89
Simulation-Based Apparent Surface Free-Energy Analysis for Hydrophobic and Superhydrophobic Surfaces, p.95
Study of the Dielectric, Magnetic and Resistive Properties of Various Substances, p.105

Home > Defect and Diffusion Forum > Defects and Diffusion in Metals XII > Non-Gaussian Local Density Diffusion (LDD-) Model...

Paper Title:

Non-Gaussian Local Density Diffusion (LDD-) Model for Boron Diffusion in Si- and Si_xGe_1-x Ultra-Shallow Junction Post-Implant and Advanced Rapid-Thermal-Anneals

Periodical	Defect and Diffusion Forum (Volumes 305 - 306)
Main Theme	Defects and Diffusion in Metals XII
Edited by	David J. Fisher
Pages	71-84
DOI	10.4028/www.scientific.net/DDF.305-306.71
Citation	Frank Wirbeleit, 2010, Defect and Diffusion Forum, 305-306, 71
Online since	October, 2010
Authors	Frank Wirbeleit
Keywords	Boron, Diffusion, Germanium, Implant, Non-Gaussian Diffusion Model, SiGe, Silicon, Ultra Shallow Junction
Price	US$ 28,-

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Abstract

Boron diffusion after implant and anneal has been studied extensively in the past, without de-convoluting the Boron diffusion behavior by the initial post implant Boron concentration profile, which is done in this work first time. To support the de-convolution approach, the local density diffusion (LDD) model is selected, because this model is based on just one single arbitrary diffusion parameter per atomic species and host lattice combination. The LDD model is used for Phosphorus and Arsenic diffusion so far and an extension to simulate Boron diffusion in presence of Boron clusters is presented here. As the result, maximum Boron penetration depth post different rapid thermal anneals and the quantification of diffusing and clustering (non-diffusing) Boron in silicon and silicon-germanium host lattice systems are given.