Boron in silicon has presented challenges for decades because of clustering and so-called transient enhanced diffusion [1-2]. An understanding of boron diffusion post rapid thermal annealing in general, and out of in situ doped epitaxially grown silicon-germanium films in particular, is essential to hetero junction engineering in microelectronic device technology today. In order to model boron diffusion, post-implantation, the local density diffusion (LDD) model has been applied in the past . Via mathematical convolution of the diffusion model slope and the initial boron concentration profile, these former results were transferred to this work. In this way, non-diffusing boron was predicted to exist in the center of the presented in situ boron-doped films. In addition, boron diffusion control by co-implanted carbon was demonstrated and the applied LDD model was completed and confirmed by adapting A. Einstein’s proof  for this purpose.