Local Density Diffusivity (LDD-) Model for Boron Out-Diffusion of In Situ Boron-Doped Si0.75Ge0.25 Epitaxial Films Post Advanced Rapid Thermal Anneals with Carbon Co-Implant
| Periodical | Defect and Diffusion Forum (Volume 307) |
|---|---|
| Main Theme | Defects and Diffusion, Theory & Simulation II |
| Edited by | David J. Fisher |
| Pages | 63-73 |
| DOI | 10.4028/www.scientific.net/DDF.307.63 |
| Citation | Frank Wirbeleit, 2010, Defect and Diffusion Forum, 307, 63 |
| Online since | December, 2010 |
| Authors | Frank Wirbeleit |
| Keywords | Boron, Diffusion, Germanium, Implant, Non-Gaussian Diffusion Model, SiGe, Silicon, Ultra Shallow Junction |
| Price | US$ 28,- |
Boron in silicon has presented challenges for decades because of clustering and so-called transient enhanced diffusion [1-2]. An understanding of boron diffusion post rapid thermal annealing in general, and out of in situ doped epitaxially grown silicon-germanium films in particular, is essential to hetero junction engineering in microelectronic device technology today. In order to model boron diffusion, post-implantation, the local density diffusion (LDD) model has been applied in the past [3]. Via mathematical convolution of the diffusion model slope and the initial boron concentration profile, these former results were transferred to this work. In this way, non-diffusing boron was predicted to exist in the center of the presented in situ boron-doped films. In addition, boron diffusion control by co-implanted carbon was demonstrated and the applied LDD model was completed and confirmed by adapting A. Einstein’s proof [4] for this purpose.
