Paper Title:
Electrical Properties of Nanostructured Titanium Dioxide Thin Films Prepared by Sol-Gel Spin-Coating Method
  Abstract

This paper investigated the electrical properties of nanostructured Titanium Dioxide (TiO2) thin films prepared by the sol-gel method at different annealing temperatures. The precursor used was Titanium (IV) butoxide at concentration of 0.4 M. The TiO2 thin films were deposited on the glass and silicon substrates by using the spin coating technique. The influence of annealing temperatures on the electrical, structural, surface morphology and optical properties of the films were characterized by I-V measurement, X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and UV-Vis Spectroscopy, respectively. It was found that the electrical properties of TiO2¬ thin films were changed due to the changes of annealing temperatures. As the annealing temperatures rises, the resistivity of the film found to be decreased. The result also shows that films which does not applied annealing temperature called as deposited were found to be amorphous while the films with annealing temperature T = 350oC and above became crystalline structure. The anatase phase can be obtained at annealing temperatures from T = 350oC up to T = 500oC.

  Info
Periodical
Defect and Diffusion Forum (Volumes 312-315)
Edited by
Andreas Öchsner, Graeme E. Murch and João M.P.Q. Delgado
Pages
1027-1031
DOI
10.4028/www.scientific.net/DDF.312-315.1027
Citation
M. N. Asiah, M. Z. Basri, M. Rusop, "Electrical Properties of Nanostructured Titanium Dioxide Thin Films Prepared by Sol-Gel Spin-Coating Method", Defect and Diffusion Forum, Vols. 312-315, pp. 1027-1031, 2011
Online since
April 2011
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Price
$32.00
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