Paper Title:
Optical Properties of Nanostructured Zinc Oxides Deposited on Silicon Substrates
  Abstract

Nanostructured zinc oxide (ZnO) thin films were prepared through sol-gel method and spin-coating technique. ZnO thin films then were annealed at temperature of 350°C, 400°C, 450°C and 500°C. The thin films were characterized using field emission scanning electron microscope (FESEM), UV-VIS-NIR spectrophotometer and photoluminescence (PL) spectrofluorometer for morphology and optical properties study. The morphology study indicates that the particle size of ZnO increased with annealing temperatures. All thin films are optically transparent (~ 80 % in transmittance) in the visible light-NIR region. PL spectra reveal improved UV emission with annealing temperatures up to 500°C.

  Info
Periodical
Defect and Diffusion Forum (Volumes 312-315)
Edited by
Andreas Öchsner, Graeme E. Murch and João M.P.Q. Delgado
Pages
1132-1136
DOI
10.4028/www.scientific.net/DDF.312-315.1132
Citation
M. H. Mamat, Z. Khusaimi, M. M. Rusop , "Optical Properties of Nanostructured Zinc Oxides Deposited on Silicon Substrates", Defect and Diffusion Forum, Vols. 312-315, pp. 1132-1136, 2011
Online since
April 2011
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$32.00
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