Paper Title:
In Situ Simulation by RHEED and Photoemission of GaAs (001) β2(2x4) Reconstructed Surface
  Abstract

In situ monitoring of surface processes and understanding of growth processes are important in achieving precise control of crystal growth. Therefore, many surface monitoring techniques are used during crystal growth by molecular beam epitaxy (MBE). The most popular is reflection high-energy electron diffraction (RHEED) and photoemission current which provides information on the morphology during the growing surface. The photoemission oscillation technique has been successfully used in situ to monitor the growth of materials and to control the thickness as well as the roughness of the deposited layer. In this paper, we report results of atomic scale simulations used to study the dynamics of homoepitaxial growth of GaAs(001) β2(2x4) reconstructed surface and, in particular, the RHEED oscillations of the photoemission current.

  Info
Periodical
Defect and Diffusion Forum (Volumes 312-315)
Edited by
Andreas Öchsner, Graeme E. Murch and João M.P.Q. Delgado
Pages
132-137
DOI
10.4028/www.scientific.net/DDF.312-315.132
Citation
H. Khachab, Y. Abdelkafi, A. Belghachi, "In Situ Simulation by RHEED and Photoemission of GaAs (001) β2(2x4) Reconstructed Surface", Defect and Diffusion Forum, Vols. 312-315, pp. 132-137, 2011
Online since
April 2011
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