Paper Title:
Finite Element Modeling of Silicon Transport into Germanium Using a Simplified Crystal Growth Technique
  Abstract

A numerical simulation study, using finite element method, was carried out to examine the temperature and concentration fields in the dissolution process of silicon into germanium melt. This work utilized a simplified configuration which may be considered to be similar material configuration to that used in the Vertical Bridgman growth methods. The concentration profile for the Si-Ge sample processed using this technique shows increasing transport silicon into the melt with time, moreover, a flat stable interface is observed. The mass and momentum equations for fluid flow, the energy and the solute mass transport were numerically solved. Results showed good agreements with experiments.

  Info
Periodical
Defect and Diffusion Forum (Volumes 312-315)
Edited by
Andreas Öchsner, Graeme E. Murch and João M.P.Q. Delgado
Pages
240-247
DOI
10.4028/www.scientific.net/DDF.312-315.240
Citation
F. Mechighel, M. El Ganaoui, B. Pateyron, M. Kadja, S. Dost, "Finite Element Modeling of Silicon Transport into Germanium Using a Simplified Crystal Growth Technique", Defect and Diffusion Forum, Vols. 312-315, pp. 240-247, 2011
Online since
April 2011
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Price
$32.00
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